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Provisional Data Sheet No. PD 9.1285C
HEXFET(R) POWER MOSFET
IRFY044CM
N-CHANNEL
60 Volt, 0.040 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFY044CM BVDSS 60V RDS(on) 0.040 ID 16A*
Features
n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets
Absolute Maximum Ratings
Parameter
I D @ VGS=10V, TC = 25C I D @ VGS=10V, TC = 100C I DM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ Tstg
IRFY044CM
Units
A W W/K V mJ A mJ V/ns C g
Continuous Drain Current 16* Continuous Drain Current 16* Pulsed Drain Current 156 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage 20 Single Pulse Avalance Energy 100 Avalance Current 16* Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt 4.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical)
* ID current limited by pin diameter
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IRFY044CM Device Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS BVDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min
60 -- -- -- 2.0 17 -- -- -- -- 29 6.7 18 -- -- -- -- -- --
Typ Max Units
-- 0.68 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.040 -- 4.0 -- 25 250 100 -100 88 15 52 23 130 81 79 -- -- V
Test Conditions
VGS = 0V, I D = 1.0mA
V/C Reference to 25C, ID = 1.0mA VGS = 10V, ID = 16A
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
V VDS = VGS, ID = 250A S ( ) VDS 15V, IDS = 16A VDS = 0.8 x max. rating,VGS = 0V A VDS = 0.8 x max. rating VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V VGS = 10V, ID = 16A nC VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 30V, ID = 16A, RG = 9.1 VGS = 10V ns see figure 10
Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances.
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2400 1100 230
-- -- --
pF
VGS = 0v, VDS = 25V f = 1.0MHz. see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 16 156 2.5 220 1.6 A
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
V ns C
Tj = 25C, I S = 16A, VGS = 0V Tj = 25C, IF = 16A, di/dt 100 A/s VDD 50 V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink
Min Typ Max Units
-- -- -- -- -- 0.21 1.25 80 K/W --
Test Conditions
Typical socket mount Mounting surface flat, smooth
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IRFY044CM Device
Fig. 1 -- Typical Output Characteristics TC = 25C
Fig. 2 --Typical Output Characteristics TC = 150C
39A
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs. Temperature
16A
Fig. 5 -- Typical Capacitance Vs. Drain-to-Source Voltage
Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source Voltage
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IRFY044CM Device
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us 100 100us
I D, Drain Current (A)
1ms 10
D , Drain Current (A) I
10ms
1
TC = 25 oC TJ = 150 oC Single Pulse
1 10 100
Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage
40
Fig. 8 -- Maximum Safe Operating Area
VDS , Drain-to-Source Voltage (V)
ID , D ra in C ur re nt ( Am p s)
L IM IT ED BY P AC KA G E
30
20
10
0 25 50 75 100 125
A
150
TC , C a se T em p era tu re (C )
Fig. 9 -- Maximum Drain Current Vs. Case Temperature
Fig. 10a -- Switching Time Test Circuit
Fig. 10b -- Switching Time Waveforms
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IRFY044CM Device
10 10
Thermal Response (ZthJC)
11
0.50 0.20 0.10 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1
.01 0.01 0.00001
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
VD S
thJC
0
.1 0.1
0.05 0.02 0.01
RG
Fig. 12a -- Unclamped Inductive Test Circuit
E A S , S in g le P uls e A v a la nc h e E ne rgy (m J )
100
80
60
40
20
Fig. 12c -- Max. Avalanche Energy vs. Current
Thermal Respo
0.0001
t1 , Rectangular Pulse Duration (sec)
V (B R)DSS
L
D R IVE R
tp
D .U .T IA S tp 0 .0 1
+ - VD D
A
I AS
Fig. 12b -- Unclamped Inductive Waveforms
ID = 5 1 A V D D = 2 5V
25 50 75 100 125 150
A
175
S tarting T J , J u nc tio n Te m p eratu re (C )
Fig. 13a -- Gate Charge Test Circuit
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IRFY044CM Device
Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 11).
@ VDD = 25V, Starting TJ = 25C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = 16A, VGS = 10V, 25 RG 200 I SD 16A, di/dt 100A/s, VDD BVDSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Fig. 13b -- Basic Gate Charge Waveform
Case Outline and Dimensions
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
TO-257AA
NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY044C
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA
CAUTION BERYLLIAWARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
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